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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Base current Collector-emitter voltage Emitter-base voltage E SEM NG Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 200 180 6 15 4 130 150 -55~150 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC3856 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 180 V VCEsat ICBO Collector-emitter saturation voltage IC=5A ;IB=0.5A VCB=200V ;IE=0 2.0 V Collector cut-off current 100 |I A IEBO Emitter cut-off current VEB=6V; IC=0 100 |I A hFE DC current gain IC=3A ; VCE=4V 50 180 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 300 pF fT Transition frequency IC=0.5A ; VCE=12V Switching times ton Fall time Turn-on time ts tf INC P Storage time E SEM ANG H Y 90-180 IC=10A;RL=4| IB1=- IB2=1A VCC=40V OND IC TOR UC 0.50 1.80 0.60 20 MHz |I s |I s |I s hFE Classifications O 50-100 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3856 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3856 CHA IN E SEM NG OND IC TOR UC 4 |
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